Mitha, SalmanAziz, MichaelSchiferl, DavidPoker, David B.2009-07-081997Mitha, Salman, Michael J. Aziz, David Schiferl, and David B. Poker. 1997. Effect of pressure on Arsenic diffusion in Germanium: Evidence against simple vacancy mechanism. Defect and Diffusion Forum 143-147: 1041-10461012-0386http://nrs.harvard.edu/urn-3:HUL.InstRepos:3153323We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-implanted samples were carried out in a high temperature diamond anvil cell using fluid argon as a clean, hydrostatic pressure medium. At 575 degree Celsius over the pressure range 0.1 to 4 GPa, pressure slightly enhances the diffusivity, characterized by an activation volume of -1.7±1.4 cm^3/mole or -0.12±0.10 times the atomic volume of Ge. The results call into question the prevailing view that diffusion of group III, IV and V elements is mediated entirely by vacancies. Potential explanations of these results are discussed.en-USinterstitialcyvacancymechanismpressureactivation volumesemiconductor10.4028/www.scientific.net/DDF.143-147.1041