Nygren, EricAziz, MichaelTurnbull, DavidPoate, John M.Jacobson, Dale C.Hull, Robert2009-02-051985Nygren, Eric, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull. 1985. Pressure dependence of arsenic diffusivity in silicon. Applied Physics Letters 47, no. 2: 105-107.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:2562071The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.10.1063/1.96283