Otani, KanChen, XiHutchinson, JohnChervinsky, John F.Aziz, Michael2009-04-152006Otani, Kan, Xi Chen, John W. Hutchinson, John F. Chervinsky, and Michael J. Aziz. 2006. Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation. Journal of Applied Physics 100(2): 023535.0021-8979http://nrs.harvard.edu/urn-3:HUL.InstRepos:2795731We have measured the evolving three-dimensional (3D) morphology of patterned SiO₂ stripes on Si substrates induced by 3 MeV O⁺⁺ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation.en-US10.1063/1.2215269