Dubon, Oscar D.Evans, Paul G.Chervinsky, John F.Aziz, MichaelSpaepen, FransGolovchenko, JeneChisholm, Matthew F.Muller, David A.2009-04-202001Dubon, Oscar D., Paul G. Evans, John F. Chervinsky, Michael J. Aziz, Frans A. Spaepen, Jene A. Golovchenko, Matthew F. Chisholm, and David A. Muller. 2001. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer. Applied Physics Letters 78(11): 1505-1507.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:2796981In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350 °C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate–film interface. The resulting concentration of electrically active As, 1.8×10²¹cm^–3, represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method.en-US10.1063/1.1352692