Smith, Patrick M.West, Jeffrey A.Aziz, Michael2009-04-301992Smith, Patrick M., Jeffrey A. West, Michael J. Aziz. 1992. Solute Trapping of Ge in Al. Materials Research Society Symposia Proceedings 205: 331-336.0272-9172http://nrs.harvard.edu/urn-3:HUL.InstRepos:2870695Partitioning during rapid solidification of dilute Al-Ge alloys has been investigated. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 m/s to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient <i>k</i>. A significant degree of lateral film growth during solidification confines determination of <i>k</i> to the placing of an upper bound of 0.22 on <i>k</k> for solidification velocities in this range. We place a lower limit of 10 m/s on the "diffusive velocity," which locates the transition from solute paritioning to solute trapping in the Continuous Growth Model.en-US10.1557/PROC-205-331