Liliental-Weber, ZuzannaScarpulla, Michael A.Dubon, Oscar D., Jr.Jasinski, JacekYu, Kin ManWu, JayPillai, Manoj R.Aziz, MichaelWalukiewicz, WladekJ. W., Beeman2009-04-212003Yu, Kin Man, Wladek Walukiewicz, Michael A. Scarpulla, Oscar D. Dubon, Jr., Jay Wu, Jacek Jasinski, Zuzanna Liliental-Weber, J. W. Beeman, Manoj R. Pillai, and Michael J. Aziz. Synthesis of GaN x As 1-x thin films by pulsed laser melting and rapid thermal annealing of N +-implanted GaAs. 2003. Journal of Applied Physics 94(2): 1043-1049.1089-75500021-8979http://nrs.harvard.edu/urn-3:HUL.InstRepos:2797690We present a systematic investigation on the formation of the highly mismatched alloy GaN_xAs_1–x using N⁺-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN_xAs_1–x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N⁺ implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN_xAs_1–x films are discussed.en-US10.1063/1.1582393