Lu, Guo-QuanNygren, EricAziz, Michael2010-02-251991Lu, Guo-Quan, Eric Nygren and Michael J. Aziz. 1991. Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms. Journal of Applied Physics 70: 5323-5345.0021-8979http://nrs.harvard.edu/urn-3:HUL.InstRepos:3708235The effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rate, v, of intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically-loaded fluid Ar,used as the pressure transmission medium, ensured a clean and hydrostatic environment.en-US2010-02-2510.1063/1.350243