Lu, Guo-QuanNygren, EricAziz, MichaelTurnbull, DavidWhite, C. Woody2009-05-111988Lu, Guo-Quan, Eric Nygren, Michael J. Aziz, David Turnbull, and C. Woody White. 1988. Time-Resolved reflectivity measurement of the pressure-enhanced crystallization rate of amorphous Si in a diamond anvil cell. Materials Research Society Symposia Proceedings 100: 435-440.0272-9172http://nrs.harvard.edu/urn-3:HUL.InstRepos:2913133The authors have measured the pressure dependence of the solid phase epitaxial growth (SPEG) rate of self-implanted Si (100) by using the in-situ time-resolved reflectivity technique in a high-temperature and high-pressure diamond anvil cell (DAC). With fluid argon as the pressure transmission medium, a clean and perfectly hydrostatic pressure environment is achieved around the sample. The external heating geometry employed in the DAC provides a uniform temperature across the sample. At temperatures in the range of 530-550 deg C and pressure up to 50 kbars (5 GPa), the growth rate is enhanced by up to a factor of ten over that at 1 atmosphere pressure. The results are characterized by a negative activation volume of approximately -3.0 cm/sup 3mole (-27% of the atomic volume). These preliminary results show a significantly weaker pressure dependence than does the previous work of Nygren et al. (1985), who found an activation volume of -8.7 cm/sup 3mole. The implications of these results for the nature of the defect responsible for thermal SPEG and irradiation enhanced SPEG is discussed.en-US10.1557/PROC-100-435