Recht, DanielCapasso, FedericoAziz, Michael2010-08-122009Recht, Daniel, Federico Capasso, and Michael J. Aziz. 2009. On the temperature dependence of point-defect-mediated luminescence in silicon. Applied Physics Letters 94(25): 251113.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:4341784We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.en-USJournal Article2010-08-1210.1063/1.3157277