Lemme, Max C.Bell, DavidWilliams, James R.Stern, Lewis A.Baugher, Britton W. H.Jarillo-Herrero, PabloMarcus, C2011-08-152009Lemme, Max C., David C. Bell, James R. Williams, Lewis A. Stern, Britton W. H. Baugher, Pablo Jarillo-Herrero, and Charles Masamed Marcus. 2009. Etching of graphene devices with a helium ion beam. ACS Nano 3(9): 2674-2676.1936-0851http://nrs.harvard.edu/urn-3:HUL.InstRepos:5110761We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide \((SiO_2)\) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.en-USgraphenetransistorhelium ion microscopeetchingJournal Article2011-08-1510.1021/nn900744z