Chason, E.Greer, A. L.Kelton, K. F.Pershan, PeterSorensen, L. B.Spaepen, FransWeiss, A. H.2013-03-011985Chason, E., A. L. Greer, K. F. Kelton, Peter S. Pershan, L. B. Sorensen, Frans A. Spaepen, and A. H. Weiss. 1985. Structural relaxation of amorphous \(Pd_{82}Si_{18}\): X-ray measurements, electrical-resistivity measurements, and a comparison using the Ziman theory. Physical Review B 32(6): 3399-3408.1098-01211550-235Xhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10357691Structural relaxation in amorphous \(Pd_{82}Si_{18}\) is studied using high-precision x-ray diffraction. The x-ray structure factor S(k) and the density ρ (determined from the x-ray absorption), are measured simultaneously as a function of the annealing conditions. The measured changes in S(k) are compared with those expected from simple densification using a Percus-Yevick model with two hard-sphere diameters. The variation in the electrical resistivity with annealing is also measured and is compared with the resistivity change estimated from the x-ray measurements using the Ziman theory. To allow a direct comparison of the x-ray and electrical measurements, we derive an approximate relationship between the x-ray atomic scattering factor and the pseudopotential as a substitute for a first-principles calculation. The combination of the low scattering rate from the amorphous samples and the high precision (<0.1%) necessary to allow direct comparison requires special techniques to maintain adequate system stability.en-USJournal Article2013-03-0110.1103/PhysRevB.32.3399