Rabedeau, T. A.Tidswell, I. M.Pershan, PeterBevk, J.Freer, B. S.2013-03-011991Rabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X‐ray reflectivity studies of SiO\(_2\)/Si(001). Applied Physics Letters 59(26): 3422-3424.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357570X‐ray reflectivity has been utilized in a study of the SiO\(_2\)/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (\(\pm\)110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a \(\sim\)2.7‐Å decay length.en-USJournal Article2013-03-0110.1063/1.105695