Shalish, IlanSeryogin, G.Yi, W.Bao, J. M.Zimmler, M. A.Likovich, Edward MichaelBell, DavidCapasso, FedericoNarayanamurti, Venkatesh2011-02-162009Shalish, Ilan, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, Edward Likovich, David C. Bell, Federico Capasso, and Venkatesh Narayanamurti. 2009. Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire. Nanoscale Research Letters 4(6): 532-537.1931-7573http://nrs.harvard.edu/urn-3:HUL.InstRepos:4726300We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor–liquid–solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.en-USJournal Article2011-02-1610.1007/s11671-009-9276-z