Park, HelenHeasley, Rachel LenoxGordon, Roy2013-10-082013Hejin Park, Helen, Rachel Heasley, and Roy G. Gordon. 2013. “Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing.” Applied Physics Letters 102 (13): 132110.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:11151522Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from \(10^{19}\) to \(10^{15} cm^{−3}\) by post-deposition annealing in oxygen at temperatures from 200 °C to 290 °C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by only ∼0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.en-USannealingatomic layer depositioncarrier densityenergy gapII-VI semiconductorssemiconductor growthsemi conductor thin filmsstoichiometrywide band gap semiconductorszinc compoundsJournal Article2013-04-01Park, Helen Hejin; Heasley, Rachel; Gordon, Roy G.2013-10-0810.1063/1.4800928