Wang, HongtaoXu, ShengGordon, Roy2012-11-282010Wang, Hongtao, Sheng Xu, and Roy G. Gordon. 2010. Low temperature epitaxial growth of high permittivity rutile \(TiO_2\) on \(SnO_2\). Electrochemical and Solid-State Letters 13(9): G75-G78.1099-0062http://nrs.harvard.edu/urn-3:HUL.InstRepos:9962002Thin films of high dielectric constant \(\kappa \sim 68\) rutile phase titanium dioxide \(TiO_2\) were grown epitaxially on tin dioxide \(SnO_2\) substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature \({250^\circ C}\) was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide \(H_2O_2\) as precursors. The rutile \(TiO_2\) thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase \(SnO_2\) substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces.en-USatomic layer epitaxial growthcrystal microstructureepitaxial layershigh-k dielectric thin filmspermittivitytitanium compoundsJournal Article2012-11-2810.1149/1.3457485