Sinsermsuksakul, PrasertHartman, KatyKim, Sang BokSun, LeizhiPark, HelenChakraborty, RupakBuonassisi, TonioGordon, Roy2013-04-172013Sinsermsuksakul, Prasert, Katy Hartman, Sang Bok Kim, Jaeyeong Heo, Leizhi Sun, Helen Hejin Park, Rupak Chakraborty, Tonio Buonassisi and Roy G. Gordon. 2013. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer. Applied Physics Letters 102(5): 053901.0003-69511077-3118http://nrs.harvard.edu/urn-3:HUL.InstRepos:10564511SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density \((J_{sc})\), open circuit voltage \((V_{oc})\), and fill factor (FF) of \(19.4 mA/cm^{2}\), 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.en-USbuffer layerscalcium compoundschemical vapour depositionconduction bandscurrent densityglassII-VI semiconductorsindium compoundsIV-VI semiconductorsmolybdenumpower conversionsemiconductor heterojunctionssemiconductor thin filmsshort-circuit currentssodium compoundssolar cellstin compoundswide band gap semiconductorszinc compoundsJournal Article2013-04-05Sinsermsuksakul, P.; Hartman, K.; Kim, S. B.; Heo, J.; Sun, L.; Park, H. H.; Chakraborty, R.; Buonassisi, T.; Gordon, R.G.2013-04-1710.1063/1.4789855