El-Ella, H.A.R.Rol, FKappers, M.J.Russell, KaseyHu, EvelynOliver, R.A.2013-09-062011El-Ella, H. A. R., F. Rol, M. J. Kappers, K. J. Russell, E. L. Hu, and R. A. Oliver. 2011. Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks. Applied Physics Letters 98 (13): 131909.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:11006842Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. Formation of microdisks from two near-identical structures with differing dislocation densities was carried out and investigated using microphotoluminescence. This confirmed the existence of quantum dots through the presence of resolution limited spectral lines and showed a clear correlation between the resulting modes quality factors and the dislocation densities within the disks. The disks with higher dislocation densities showed up to 80% lower quality factors than the low dislocation density disks.en-USdislocation densityetchinggallium compoundsIII-V semiconductorsindium compoundsMOCVDphotoelectrochemistryphotoluminescencesemiconductor growthsemiconductor quantum dotssemiconductor superlatticesvapour phase epitaxial growthwide band gap semiconductorsJournal Article2013-08-05El-Ella, HAR; Rol, F; Kappers, MJ; Russell, KJ; Hu, EL; Oliver, RA2013-09-0610.1063/1.3567545