Jarillo-Herrero, PabloTaychatanapat, Thiti2013-10-082013-10-082013Taychatanapat, Thiti. 2013. From Hopping to Ballistic Transport in Graphene-Based Electronic Devices. Doctoral dissertation, Harvard University.http://dissertations.umi.com/gsas.harvard:10815http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158248This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature.en-USCondensed matter physicsLow temperature physicsPhysicsbilayerelectron focusinggraphenequantum Hall effecttrilayerThesis or Dissertation2013-10-08