Liu, QingminDong, LinLiu, YiqunGordon, RoyYe, Peide D.Fay, PatrickSeabaugh, Alan2017-08-082012Liu, Qingmin, Lin Dong, Yiqun Liu, Roy Gordon, Peide D. Ye, Patrick Fay, and Alan Seabaugh. 2012. “Frequency Response of LaAlO3/SrTiO3 All-Oxide Field-Effect Transistors.” Solid-State Electronics 76 (October): 1–4. doi:10.1016/j.sse.2012.05.044.0038-1101http://nrs.harvard.edu/urn-3:HUL.InstRepos:33724727The frequency response of all oxide field-effect transistors with amorphous LaAlO3 on a crystalline SrTiO3 substrate is reported. The intrinsic cut-off frequencies of 4 μm gate-length devices are found to be approximately 17 MHz indicating that with gate length scaling gigahertz cut-off frequency is possible. The low cut-off frequency is primarily limited by the low effective mobility. The estimated effective mobility value determined from the S-parameter measurement is 3.8 cm2/Vs, which is consistent with previous reports. Small-signal equivalent circuit model parameters are extracted by fitting to on-wafer measured S-parameters. Good agreement is obtained between measured and simulated S-parameters based on the equivalent circuit model.en-USField-effect transistorHeterojunctionLanthanum aluminateStrontium titanateJournal Article2014-02-22Qingmin Liu, Lin Dong, Yiqun Liu, Roy Gordon, Peide D. Ye, Patrick Fay, Alan Seabaugh10.1016/j.sse.2012.05.044