Wan, YatingLi, QiangLiu, Alan Y.Chow, Weng W.Gossard, Arthur C.Bowers, John E.Hu, EvelynLau, Kei May2017-10-042016Wan, Yating, Qiang Li, Alan Y. Liu, Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau. 2016. “Sub-Wavelength InAs Quantum Dot Micro-Disk Lasers Epitaxially Grown on Exact Si (001) Substrates.” Applied Physics Letters 108 (22) (May 30): 221101. doi:10.1063/1.4952600.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:33983359Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.en-USJournal Article2017-10-0410.1063/1.4952600