Pham, LinhBar-Gill, N.Le Sage, DavidBelthangady, ChinmayStacey, A.Markham, M.Twitchen, D. J.Lukin, MikhailWalsworth, Ronald2014-03-062012Pham, L. M., N. Bar-Gill, D. Le Sage, C. Belthangady, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, and R. L. Walsworth. 2012. “Enhanced Metrology Using Preferential Orientation of Nitrogen-Vacancy Centers in Diamond.” Phys. Rev. B 86 (12) (September): 121202(R)1098-0121http://nrs.harvard.edu/urn-3:HUL.InstRepos:11870337We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.en-USEnhanced metrology using preferential orientation of nitrogen-vacancy centers in diamondJournal Article2014-02-24Mikhail Lukin2014-03-0610.1103/physrevb.86.121202