Park, HelenHeasley, Rachel LenoxSun, LeizhiSteinmann, VeraHartman, KatyChakraborty, RupakSinsermsuksakul, PrasertChua, DannyBuonassisi, TonioGordon, Roy2014-06-122014Park, Helen Hejin, Rachel Heasley, Leizhi Sun, Vera Steinmann, Rafael Jaramillo, Katy Hartman, Rupak Chakraborty, Prasert Sinsermsuksakul, Danny Chua, Tonio Buonassisi, Royb G. Gordon, (2015), Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells. Progress in Photovoltaics 23 (7): 901–908.http://nrs.harvard.edu/urn-3:HUL.InstRepos:12311539Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.en-USSnS thin-film solar cellzinc oxysulfidebuffer layeratomic layer depositionpulsed-chemical vapor depositionJournal Article2014-04-23Park, Helen Hejin; Heasley, Rachel; Sun, Leizhi; Steinmann, Vera; Jaramillo, R.; Hartman, Katy; Chakraborty, Rupak; Sinsermsuksakul, Prasert; Chua, Danny; Buonassisi, Tonio; Gordon, Roy G.2014-06-1210.1002/pip.2504