Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

Lee, Sang WoonHeo, JaeyeongGordon, Roy2018-01-232013Lee, Sang Woon, Jaeyeong Heo, and Roy G. Gordon. 2013. “Origin of the Self-Limited Electron Densities at Al2O3/SrTiO3 Heterostructures Grown by Atomic Layer Deposition – Oxygen Diffusion Model.” Nanoscale 5 (19): 8940. doi:10.1039/c3nr03082b.2040-33642040-3372http://nrs.harvard.edu/urn-3:HUL.InstRepos:34722202Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.en-USOrigin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion modelJournal Article10.1039/c3nr03082b