Aggarwal, R. L.Farrar, L. W.Saikin, S. K.Aspuru-Guzik, AlanStopa, Michael PPolla, D. L.2014-08-072011Aggarwal, R. L., L. W. Farrar, S. K. Saikin, A. Aspuru-Guzik, M. Stopa, and D. L. Polla. 2011. “Measurement of the Absolute Raman Cross Section of the Optical Phonon in Silicon.” Solid State Communications 151 (7) (April): 553–556. doi:10.1016/j.ssc.2011.01.011. http://dx.doi.org/10.1016/j.ssc.2011.01.011.0038-1098http://nrs.harvard.edu/urn-3:HUL.InstRepos:12696010The absolute Raman cross section \(\sigma_{RS}\) of the first-order \(519 cm^{−1}\) optical phonon in silicon was measured using a small temperature-controlled blackbody for the signal calibration of the Raman system. Measurements were made with a 25-mil thick (001) silicon sample located in the focal plane of a 20-mm effective focal length (EFL) lens using 785-, 1064-, and 1535-nm CW pump lasers for the excitation of Raman scattering. The pump beam was polarized along the [100] axis of the silicon sample. Values of \(1.0±0.2×10^{−27}\), \(3.6±0.7×10^{−28}\), and \(1.1±0.2×10^{−29} cm^2\) were determined for \(\sigma_{RS}\) for 785-, 1064-, and 1535-nm excitation, respectively. The corresponding values of the Raman scattering efficiency S are \(4.0±0.8×10^{−6}\), \(1.4±0.3×10^{−6}\), and \(4.4±0.8×10^{−8} cm^{−1} sr^{−1}\).The values of the Raman polarizability |d| for 785-, 1064-, and 1535-nm excitation are \(4.4±0.4×10^{−15}\), \(5.1±0.5×10^{−15}\), and \(1.9±0.2×10^{−15} cm^2\), respectively. The values of \(4.4±0.4×10^{−15}\) and \(5.1±0.5×10^{−15} cm^2\) for |d| for 785- and 1064-nm excitation, respectively, are 1.3 and 2.0 times larger than the values of \(3.5×10^{−15}\) and \(2.5×10^{−15} cm^2\) calculated by Wendel. The Raman polarizability |d| computed using the density functional theory in the long-wavelength limit is consistent with the general trend of the measured data and Wendel’s model.en-USsemiconductorsphotonsinelastic light scatteringJournal Article10.1016/j.ssc.2011.01.011