Sullivan, J. T.Simmons, C. B.Krich, J. J.Akey, AustinRecht, DanielAziz, MichaelBuonassisi, T.2015-04-212013Sullivan, J. T., C. B. Simmons, J. J. Krich, A. J. Akey, D. Recht, M. J. Aziz, and T. Buonassisi. 2013. “Methodology for Vetting Heavily Doped Semiconductors for Intermediate Band Photovoltaics: A Case Study in Sulfur-Hyperdoped Silicon.” Journal of Applied Physics 114 (10): 103701. doi:10.1063/1.4820454.0021-89791089-7550http://nrs.harvard.edu/urn-3:HUL.InstRepos:14550025We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a “performance figure of merit” and to determine both the position and bandwidth of the impurity band. We evaluate a candidate impurity-band material, silicon hyperdoped with sulfur; we find that the figure of merit is more than one order of magnitude too low for photovoltaic devices that exceed the thermodynamic efficiency limit for single band gap materials.en-USPhotoconductivitySiliconPhotonsDopingConduction bandsJournal Article2015-04-2110.1063/1.4820454