Fabbri, FilippoSmith, Matthew J.Recht, DanielAziz, MichaelGradečak, SilvijaSalviati, Giancarlo2015-04-212013Fabbri, Filippo, Matthew J. Smith, Daniel Recht, Michael J. Aziz, Silvija Gradečak, and Giancarlo Salviati. 2013. “Depth-Resolved Cathodoluminescence Spectroscopy of Silicon Supersaturated with Sulfur.” Appl. Phys. Lett. 102 (3): 031909. doi:10.1063/1.4788743.0003-69511077-3118http://nrs.harvard.edu/urn-3:HUL.InstRepos:14549989We investigate the luminescence of Si supersaturated with S (Si:S) using depth-resolved cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S concentration is varied over 2 orders of magnitude \((10^{18}–10^{20} cm^{−3})\). In single-crystalline supersaturated Si:S, we identify strong luminescence from intra-gap states related to Si self-interstitials and a S-related luminescence at 0.85 eV, both of which show a strong dependence on S concentration in the supersaturated regime. Sufficiently high S concentrations in Si \((>10^{20} cm^{−3})\) result in complete luminescence quenching, which we propose is a consequence of the overlapping of the defect band and conduction band.en-USLuminescenceDopingCathodoluminescenceSecondary ion mass spectroscopyIon implantationJournal Article2015-04-2110.1063/1.4788743