Bedrossian, P.Mortensen, K.Chen, D. M.Golovchenko, Jene2016-11-181990Bedrossian, P., K. Mortensen, D. M. Chen, and J. A. Golovchenko. 1990. Adatom registry on Si(111)-(√3 × √3 )R30°-B. Physical Review B 41, no. 11: 7545–7548. doi:10.1103/physrevb.41.7545.0163-1829http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407033We have used tunneling microscopy to determine the binding site of adatoms on Si(111)-(√3 × √3 )R30° stabilized by surface boron doping. The adatoms are found to occupy the T4 binding site, regardless of either the local dopant concentration or the presence or absence of a substitutional boron atom directly underneath individual adatoms.en-USJournal Article2016-11-1810.1103/PhysRevB.41.7545