Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]

Evans, P. G.Dubon, O. D.Chervinsky, JohnSpaepen, FransGolovchenko, Jene2016-11-172000Evans, P. G., O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko. 2000. Comment on "Low-Temperature Homoepitaxial Growth on High-Miscut Si(111) Mediated by Thin Overlayers of Pb" [Appl. Phys. Lett. 75, 2954 (1999)]. Applied Physics Letters 77, no. 16: 2616. doi:10.1063/1.1318930.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29405824en-USepitaxyComment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]Journal Article2016-11-1710.1063/1.1318930