Theiss, Silva K.Chen, D. M.Golovchenko, Jene2016-11-171995Theiss, Silva K., D. M. Chen, and J. A. Golovchenko. 1995. Three-Stage Lattice Relaxation of Ge Islands on Si(111) Measured by Tunneling Microscopy. Applied Physics Letters 66, no. 4: 448. doi:10.1063/1.114052.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29406267We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk Si value, at the end of which the lattice spacing atop some of the islands exceeds that of bulk Ge. (II) (50–80 layers) Rapid decrease in surface lattice spacing, to nearly 2% below the bulk Ge value. (III) (≳80 layers) Gradual relaxation to the bulk value. Additional observations of dislocations and analysis of island widths are used to explain this behavior.en-USelemental semiconductorsgermaniumheight measurementstunnelingsurface measurementsJournal Article2016-11-1710.1063/1.114052