Gordon, RoyFeng, JunLi, KechengGong, Xian2017-02-152016Gordon, Roy G.; Feng, Jun; Li, Kecheng; Gong, Xian. 2016. Vapor Deposition of Copper-Manganese Interconnects. In Proceedings of IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), San Jose, CA, May 23-26, 2016.http://nrs.harvard.edu/urn-3:HUL.InstRepos:30353762Chemical vapor deposition (CVD) of copper and manganese can produce interconnects scaled down to below 10 nm, while enhancing their conductivity and lifetime. CVD using similar super-conformal processes can enable very narrow through-silicon-vias, as well as tiny and robust flexible wires between chips. Silica insulating layers can be made by a super-conformal and rapid atomic layer deposition (ALD) process.en-USinterconnectsthrough silicon viaschemical vapor depositioncoppermanganesediffusion barriervoid-free fillingConference Paper2017-01-2620162017-02-1510.1109/iitc-amc.2016.7507723