Zhang, JingyunLou, XiabingSi, MengweiWu, HengShao, JiayiManfra, Michael J.Gordon, RoyYe, Peide D.2015-03-102015Zhang, Jingyun, Xiabing Lou, Mengwei Si, Heng Wu, Jiayi Shao, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye. 2015. “Inversion-Mode GaAs Wave-Shaped Field-Effect Transistor on GaAs (100) Substrate.” Appl. Phys. Lett. 106 (7) (February 16): 073506. Portico. doi:10.1063/1.4913431.0003-69511077-3118http://nrs.harvard.edu/urn-3:HUL.InstRepos:14117006Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.en-USJournal Article2015-02-24Zhang, Jianyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide Y.2015-03-1010.1063/1.4913431