Mathews, JayAkey, Austin J.Recht, DanielMalladi, GirishEfstathiadis, HarryAziz, MichaelWarrender, Jeffrey M.2015-09-212014Mathews, Jay, Austin J. Akey, Daniel Recht, Girish Malladi, Harry Efstathiadis, Michael J. Aziz, and Jeffrey M. Warrender. 2014. “On the Limits to Ti Incorporation into Si Using Pulsed Laser Melting.” Applied Physics Letters 104 (11) (March 17): 112102. doi:10.1063/1.4868724.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:22676989Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation of 15 keV 48Ti+ at doses of 1012 to 1016 cm−2 followed by pulsed laser melting using a Nd:YAG laser (FWHM = 6 ns) operating at 355 nm. All implanted layers were examined using cross-sectional transmission electron microscopy, and only the 1016 cm−2 Ti implant dose showed evidence of Ti clustering in a microstructure with a pattern of Ti-rich zones. The liquid phase diffusivity and diffusive velocity of Ti in Si were estimated to be 9 × 10−4 cm2/s and (2 ± 0.5) × 104 m/s, respectively. Using these results the morphological stability limit for planar resolidification of Si:Ti was evaluated, and the results indicate that attaining sufficient concentrations of Ti in Si to reach the nominal Mott transition in morphologically stable plane-front solidification should occur only for velocities so high as to exceed the speed limits for crystalline regrowth in Si(111).en-USSolidificationStacking faultsSecondary ion mass spectroscopyLiquid solid interfacesDiffusionJournal Article2015-09-2110.1063/1.4868724