Brovman, Yuri M.Small, Joshua P.Hu, YongjieFang, YingLieber, CharlesKim, Philip2017-07-182016Brovman, Yuri M., Joshua P. Small, Yongjie Hu, Ying Fang, Charles M. Lieber, and Philip Kim. 2016. “Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/silicon Nanowires.” Journal of Applied Physics 119 (23) (June 21): 234304. doi:10.1063/1.4953818.0021-8979http://nrs.harvard.edu/urn-3:HUL.InstRepos:33464214We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes, respectively. At room temperature, peak TEP value of ∼300μ∼300 μV/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values is used to estimate the carrier doping of Si nanowires.en-USJournal Article2017-05-1220162017-07-1810.1063/1.4953818