Evans, P. G.Dubon, O. D.Chervinsky, JohnSpaepen, F.Golovchenko, Jene2016-11-171998Evans, P. G., O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko. 1998. Low-Temperature Homoepitaxial Growth on Si(111) through a Pb Monolayer. Applied Physics Letters 73, no. 21: 3120. doi:10.1063/1.122692.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29405826A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Filmsgrown on substrates miscut 2.3° towards [112̄] show good crystalline quality down to 310 °C.en-USepitaxyleadmonolayersthin filmsamorphous semiconductorsJournal Article2016-11-1710.1063/1.122692