Woicik, J. C.Franklin, GillianLiu, ChienMartinez, RHwong, I.-S.Bedzyk, M. J.Patel, J. R.Golovchenko, Jene2016-11-171994Woicik, J. C., G. E. Franklin, Chien Liu, R. E. Martinez, I.-S. Hwong, M. J. Bedzyk, J. R. Patel, and J. A. Golovchenko. 1994. Structural Determination of the Si(111) √3×√3-Bi Surface by x-Ray Standing Waves and Scanning Tunneling Microscopy. Physical Review B 50, no. 16: 12246–12249. doi:10.1103/physrevb.50.12246.0163-1829http://nrs.harvard.edu/urn-3:HUL.InstRepos:29406270X-ray standing-wave measurements and tunneling microscopy have been combined to solve the atomic geometry of the √3×√3R30° honeycomb phase of Bi on Si(111). The standing-wave measurements utilize three different diffracting planes to triangulate the surface position of Bi atoms. The unoccupied surface sites required to completely determine the structure can be deduced from Rutherford-backscattering coverage and low-energy electron-diffraction symmetry arguments. These arguments are completely confirmed by a tunneling-microscope study, which is free of the ambiguities of previous studies. The final result is a 2/3-ML √3×√3R30° structure with Bi atoms in the T1 sites directly above first-layer Si atoms.en-USJournal Article2016-11-1710.1103/PhysRevB.50.12246