Golovchenko, JeneGoland, A. N.Rosner, J. S.Thorn, C. E.Wegner, H. E.Knudsen, H.Moak, C. D.2016-11-181981Golovchenko, J. A., A. N. Goland, J. S. Rosner, C. E. Thorn, H. E. Wegner, H. Knudsen, and C. D. Moak. 1981. Charge State Dependence of Channeled Ion Energy Loss. Physical Review B 23, no. 3: 957–966. doi:10.1103/physrevb.23.957.0163-1829http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407056The charge state dependence of channeled ion energy loss has been determined for a series of ions ranging from fluorine to chlorine along the ⟨110⟩ direction in a silicon crystal. Energy losses for both bare ions and ions partially clothed with bound electrons at EA≅3 MeV/amu have been measured. The energy-loss rate for bare ions follows a strict Z21 scaling and agrees reasonably well with quantal perturbation calculations without the need for polarization or Bloch corrections. An explanation for this result is discussed. The clothed-ion energy losses appear to demonstrate screening effects that agree qualitatively with simple estimates. The angular dependence of the observed energy-loss effects is also presented.en-USJournal Article2016-11-1810.1103/PhysRevB.23.957