Golovchenko, JeneVenkatesan, T. N. C.2016-11-181978Golovchenko, J. A., and T. N. C. Venkatesan. 1978. Annealing of Te-Implanted GaAs by Ruby Laser Irradiation. Applied Physics Letters 32, no. 3: 147. doi:10.1063/1.89962.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407065A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser‐irradiated sample is more than ten times the known maximum solubility of Te in GaAs.en-USruby lasersannealinglaser beam effectssolubilitytelluriumJournal Article2016-11-1810.1063/1.89962