Altfeder, I. B.Golovchenko, JeneNarayanamurti, Venkatesh2015-09-022001Altfeder, I. B., J. A. Golovchenko, and V. Narayanamurti. 2001. “Confinement-Enhanced Electron Transport Across a Metal-Semiconductor Interface.” Physical Review Letters 87 (5) (July). doi:10.1103/physrevlett.87.056801.0031-9007http://nrs.harvard.edu/urn-3:HUL.InstRepos:21976372We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.en-USJournal Article2015-09-0210.1103/PhysRevLett.87.056801