Engel, Hans-AndreasHalperin, BertrandRashba, Emmanuel2016-03-152005Engel, Hans-Andreas, Bertrand I. Halperin, and Emmanuel I. Rashba. 2005. “Theory of Spin Hall Conductivity in n -Doped GaAs.” Physical Review Letters 95 (16) (October 13). doi:10.1103/physrevlett.95.166605.0031-9007http://nrs.harvard.edu/urn-3:HUL.InstRepos:25915646We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al.en-USTheory of Spin Hall Conductivity in n-Doped GaAsJournal Article2016-01-29Hans-Andreas Engel, Bertrand I. Halperin, and Emmanuel I. Rashba2016-03-1510.1103/PhysRevLett.95.166605