Wang, XinweiGordon, Roy2017-08-082013Wang, Xinwei, and Roy G. Gordon. 2013. “ High-Quality Epitaxy of Ruthenium Dioxide, RuO 2 , on Rutile Titanium Dioxide, TiO 2 , by Pulsed Chemical Vapor Deposition .” Crystal Growth & Design 13 (3) (March 6): 1316–1321. doi:10.1021/cg301801h.1528-7483http://nrs.harvard.edu/urn-3:HUL.InstRepos:33724770Pulsed chemical vapor deposition was used to prepare epitaxial ruthenium dioxide (RuO2) film on rutile TiO2 (011) at low temperature 280 °C. Reciprocal space mapping by high resolution XRD was used to examine the quality of epitaxy, which demonstrated a high quality of epitaxy of the deposited RuO2 film. The results also showed the RuO2 lattice was fully strained by the substrate in the lateral directions, and therefore distorted from tetragonal to a monoclinic structure.en-USJournal Article10.1021/cg301801h