Currivan-Incorvia, J. A.Siddiqui, S.Dutta, S.Evarts, E. R.Zhang, J.Bono, D.Ross, C. A.Baldo, M. A.2016-04-012016Currivan-Incorvia, J. A., S. Siddiqui, S. Dutta, E. R. Evarts, J. Zhang, D. Bono, C. A. Ross, and M. A. Baldo. 2016. “Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls.” Nature Communications 7 (1): 10275. doi:10.1038/ncomms10275. http://dx.doi.org/10.1038/ncomms10275.2041-1723http://nrs.harvard.edu/urn-3:HUL.InstRepos:26318753Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.en-USJournal Article2016-04-0110.1038/ncomms10275