Li, KechengFeng, JunKwak, JunkeunYang, JingGordon, Roy2017-07-142017Li, Kecheng, Jun Feng, Junkeun Kwak, Jing Yang, and Roy G. Gordon. 2017. “Pure and Conformal CVD Nickel and Nickel Monosilicide in High-Aspect-Ratio Structures Analyzed by Atom Probe Tomography.” Journal of Applied Physics 121 (17) (May 2): 175301. doi:10.1063/1.4982670.0021-8979http://nrs.harvard.edu/urn-3:HUL.InstRepos:33444600Low-resistance and uniform contacts are needed for modern 3-D silicon transistors. The formation of high-quality and conformal nickel silicide at the interface between silicon and metal contacts is a possible solution. Direct-liquid-evaporation chemical vapor deposition is used to deposit nickel films conformally inside narrow silicon trenches. The deposited Ni is then reacted with a silicon substrate to form nickel monosilicide. Atom probe tomography (APT) is used to find and count the atoms in nanoscale regions inside these 3-D structures. APT shows that these NiSi films are stoichiometrically pure, single-phase, and conformal even inside trenches with high aspect ratios. The APT technique measures all impurities, including carbon, nitrogen, and oxygen, to have concentrations less than 0.1 at. %.en-USJournal Article2017-05-0220172017-07-1410.1063/1.4982670