Surko, C. M.Simons, A. L.Auston, D. H.Golovchenko, JeneSlusher, R. E.Venkatesan, T. N. C.2016-11-181979Surko, C. M., A. L. Simons, D. H. Auston, J. A. Golovchenko, R. E. Slusher, and T. N. C. Venkatesan. 1979. Calculation of the Dynamics of Surface Melting During Laser Annealing. Applied Physics Letters 34, no. 10: 635-637. doi:10.1063/1.90619.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407058We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid and liquid are included. We compare this calculation with experimental results for the time duration of the melted surface for crystalline Si and Ge. The temperature of the liquid surface as a function of time is calculated and effects associated with the hot liquid and the vapor are also discussed.en-USliquid surfacesannealingsemiconductor surfacessurface dynamicscrystalline semiconductorsJournal Article2016-11-1810.1063/1.90619