Evans, RuffinSipahigil, AlpSukachev, DenisZibrov, AlexanderLukin, Mikhail2017-02-212016Evans, Ruffin E., Alp Sipahigil, Denis D. Sukachev, Alexander S. Zibrov, and Mikhail D. Lukin. 2016. “Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation.” Physical Review Applied 5 (4) (April 18). doi:10.1103/physrevapplied.5.044010.2331-7019http://nrs.harvard.edu/urn-3:HUL.InstRepos:30403717The negatively-charged silicon-vacancy (SiV−) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, SiV− centers with narrow optical linewidths and small inhomogeneous distributions of SiV− transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV− centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality SiV− centers into nanophotonic devices.en-USSilicon-Vacancyion implantationdiamondphotonicsquantum opticsJournal Article2017-02-2110.1103/PhysRevApplied.5.044010