Haakenaasen, R.Fork, D. K.Golovchenko, Jene2016-11-181994Haakenaasen, R., D. K. Fork, and J. A. Golovchenko. 1994. High quality crystalline YBa2Cu3O7−δ films on thin silicon substrates. Applied Physics Letters 64, no. 12: 1573. doi:10.1063/1.111843.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:29407028YBa2Cu3O7−δ(001) (YBCO)films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate buffer layers: Yttrium‐stabilized zirconia (YSZ) and CeO2. All layers were grown by an in situpulsed laser deposition process. The new films have Rutherford backscattering spectroscopy minimum yields as low as 5%, compared to 12% for YBCOfilms deposited directly on YSZ. The superconducting onset is above 90 K with a transition width ΔT of 1 K. After film deposition the Si substrate could be etched from the back to give a circular, 2‐mm‐ diam, 4000 Å uniformly thick Si membrane with 300 Å YSZ, 80 Å CeO2, and 1500–3000 Å YBCO on top.en-USthin filmssuperconducting filmsthin film depositionbuffer layerscopperJournal Article2016-11-1810.1063/1.111843