AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric

Zhou, HongchaoLou, XiabingChabak, KelsonGordon, RoyYe, Peide2016-10-132016-10-13Zhou, Hong; Lou, Xiabing; Chabak, Kelson D.; Gordon, R.G.; Ye, Peide D. 2015. AlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate Dielectric. 46th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, December 2-5, 2015.http://nrs.harvard.edu/urn-3:HUL.InstRepos:29003619en-USAlGaN/GaN MOSHEMT on Si Substrate with High on/off Ratio and High Off-state Breakdown Voltage Enabled by Atomic Layer Epitaxial MgCaO as Gate DielectricConference Paper2016-03-0820152016-10-13