Chakraborty, RitayanSteinmann, VeraMangan, NiallBrandt, R. E.Poindexter, J. R.Jaramillo, RMailoa, J. P.Hartman, K.Polizzotti, A.Yang, ChuanxiGordon, RoyBuonassisi, T.2015-12-092015Chakraborty, R., V. Steinmann, N. M. Mangan, R. E. Brandt, J. R. Poindexter, R. Jaramillo, J. P. Mailoa, et al. 2015. “Non-Monotonic Effect of Growth Temperature on Carrier Collection in SnS Solar Cells.” Applied Physics Letters 106 (20) (May 18): 203901. Portico. doi:10.1063/1.4921326.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:23894154e quantify the effects of growth temperature on material and deviceproperties of thermally evaporated SnSthin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.en-USJournal Article2015-12-03Chakaborty, R.; Steinmann, V.; Mangan, N.M.; Brandt, R.E.; Poindexter, J.R.; Jaramillo, R.; Mailoa, J.P.; Hartman, K.; Polizzotti, A.; Yang, C.; Gordon, R.G.; Buonassisi, T.2015-12-0910.1063/1.4921326