Huang, MengchenJnawali, GirirajHsu, Jen-FengDhingra, ShonaliLee, HyungwooRyu, SangwooBi, FengGhahari, FereshteRavichandran, JayakanthChen, LuKim, PhilipEom, Chang-BeomD’Urso, BrianIrvin, PatrickLevy, Jeremy2016-07-202015Huang, Mengchen, Giriraj Jnawali, Jen-Feng Hsu, Shonali Dhingra, Hyungwoo Lee, Sangwoo Ryu, Feng Bi, et al. 2015. “Electric Field Effects in graphene/LaAlO3/SrTiO3 Heterostructures and Nanostructures.” APL Materials 3 (6) (June 1): 062502. Portico. doi:10.1063/1.4916098.2166-532Xhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:27708800We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.en-USJournal Article2016-07-2010.1063/1.4916098