Mondal, SumitGardner, Geoffrey C.Watson, John D.Fallahi, SaeedYacoby, AmirManfra, Michael J.2015-06-162014Mondal, Sumit, Geoffrey C. Gardner, John D. Watson, Saeed Fallahi, Amir Yacoby, and Michael J. Manfra. 2014. “Field-Effect-Induced Two-Dimensional Electron Gas Utilizing Modulation-Doped Ohmic Contacts.” Solid State Communications 197 (November): 20–24. doi:10.1016/j.ssc.2014.08.011.0038-1098http://nrs.harvard.edu/urn-3:HUL.InstRepos:16388186Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate reliable low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect and is tunable over a wide range of density. Device design, fabrication, and low temperature (T=0.3 K) transport data are reported.en-USSemiconductorsEpitaxyElectron transportJournal Article2015-06-1610.1016/j.ssc.2014.08.011