Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Tran, TuanAlkhaldi, HudaGandhi, HemiPastor, DavidHuston, LarissaWong-Leung, JenniferAziz, MichaelWilliams, J.2022-05-032016-08-22Tran, Tuan, Huda Alkhaldi, Hemi Gandhi, David Pastor, Larissa Huston, Jennifer Wong-Leung, Michael Aziz et al. "Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer." Appl. Phys. Lett. 109, no. 8 (2016): 082106. DOI: 10.1063/1.49616200003-69511077-3118https://nrs.harvard.edu/URN-3:HUL.INSTREPOS:37371513en-USPhysics and Astronomy (miscellaneous)Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layerJournal Article2018-05-2820162022-05-0310.1063/1.4961620